View UPA1915_141765.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

DATA SHEET
MOS FIELD EFFECT TRANSISTOR
PA1915
P-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING
DESCRIPTION
The PA1915 is a switching device which can be driven directly by a 2.5-V power source. The PA1915 features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.
PACKAGE DRAWING (Unit : mm)
0.32 +0.1 -0.05
0.65-0.15
+0.1
0.16+0.1 -0.06
2.8 0.2
6
5
4
1.5
0 to 0.1
1 2 3
FEATURES
* Can be driven by a 2.5-V power source * Low on-state resistance RDS(on)1 = 55 m MAX. (VGS = -4.5 V, ID = -2.5 A) RDS(on)2 = 58 m MAX. (VGS = -4.0 V, ID = -2.5 A) RDS(on)3 = 82 m MAX. (VGS = -2.7 V, ID = -2.5 A) RDS(on)4 = 90 m MAX. (VGS = -2.5 V, ID = -2.5 A)
0.95
0.95
0.65 0.9 to 1.1
1.9 2.9 0.2
5 ORDERING INFORMATION
PART NUMBER PACKAGE SC-95 (Mini Mold Thin Type)
1, 2, 5, 6 : Drain 3 : Gate 4 : Source
PA1915TE
EQUIVALENT CIRCUIT
Drain
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1
Note2
-20 12 4.5 18 0.2 2 150 -55 to +150
V V A A W W C C
Gate Gate Protection Diode Marking: TH
Body Diode
Source
Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Notes 1. PW 10 s, Duty Cycle 1 % 2. Mounted on FR-4 Board, t 5 sec. Remark
PT2 Tch Tstg
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. G14761EJ1V0DS00 (1st edition) Date Published May 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
2000
PA1915
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate to Source Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 RDS(on)4 TEST CONDITIONS VDS = -20 V, VGS = 0 V VGS = 12 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -2.5 A VGS = -4.5 V, ID = -2.5 A VGS = -4.0 V, ID = -2.5 A VGS = -2.7 V, ID = -2.5 A VGS = -2.5 V, ID = -2.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -10 V ID = -2.5 A VGS(on) = -4.0 V RG = 10 VDD = -16 V ID = -4.5 A VGS = -4.0 V IF = 4.5 A, VGS = 0 V -0.5 3 -1.1 8.8 45 47 61 67 820 210 100 16 14 58 46 5.0 2.0 2.5 0.86 55 58 82 90 MIN. TYP. MAX. -10 10 -1.5 UNIT
A A
V S m m m m pF pF pF ns ns ns ns nC nC nC V
5
Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage
Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D)
TEST CIRCUIT 1 SWITCHING TIME
VGS(-) D.U.T. RL PG. RG VDD
VDS
TEST CIRCUIT 2 GATE CHARGE
D.U.T. IG = -2 mA 50 RL VDD
VGS
Wave Form
0
10 %
VGS(on)
90 %
VDS(-)
90 % 90 % 10 % 10 %
PG.
VDS VGS (-) 0 = 1 s Duty Cycle 1 %
Wave Form
0 td(on) ton
tr
td(off) toff
tf
2
Data Sheet G14761EJ1V0DS00
PA1915
5 TYPICAL CHARACTERISTICS (TA = 25C)
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 80
FORWARD BIAS SAFE OPERATING AREA -100
d ite V) im 4.5
ID (pulse)
PW
PW
ID - Drain Current - A
dT - Derating Factor - %
-10
V (@
)L on = S( RD GS
-
PW
=1 0
=1
ms
ID (DC)
PW
ms
60
-1
=1 00 ms =5 s
40
20
-0.1
0
0
30 60 90 120 TA - Ambient Temperature - C
150
-0.01 -0.1
Single Pulse Mounted on 250 mm2x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board
-1
-10
-100
VDS - Drain to Source Voltage - V
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
-18
TRANSFER CHARACTERISTICS -100 -10 VDS = -10 V
VGS = -4.5 V
ID - Drain Current - A
-4.0 V
-12
ID - Drain Current - A
-1 -0.1 -0.01 -0.001
TA = 125C 75C 25C
-2.7 V -2.5 V
-6
-25C
-0.0001 0 0.0 -0.00001 0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0
-0.2
-0.4
-0.6
-0.8
-1.0
VDS - Drain to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
100
| yfs | - Forward Transfer Admittance - S
VGS - Gate to Sorce Voltage - V
FORWARD TRANSFER ADMITTANCE Vs. DRAIN CURRENT VDS = -10V
VGS(off) - Gate to Source Cut-off Voltage - V
-1.5 VDS = -10 V ID = -1 mA
10 TA = 125C 75C 25C -25C
-1.0
1
0.1
-0.5 -50
0
50
100
150
0.01 -0.01
-0.1
-1
ID - Drain Current - A
-10
-100
Tch - Channel Temperature - C
Data Sheet G14761EJ1V0DS00
3
PA1915
RDS(on) - Drain to Source On-state Resistance - m
100
VGS = -4.5 V
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS = -4.0 V
100
80
80
TA = 125C 75C 25C
60
TA = 125C 75C 25C
60
40
-25C
40
-25C
20
20
0 -0.01
-0.1
-1
-10
-100
0 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = -2.7 V
ID - Drain Current - A DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 150 VGS = -2.5 V
RDS(on) - Drain to Source On-state Resistance - m
100
TA = 125C 75C 25C
RDS(on) - Drain to Source On-state Resistance - m
100
TA = 125C 75C 25C
50
-25C
-25C 50
0 -0.01
-0.1
-1
-10
-100
0 -0.01
-0.1
-1
-10
-100
ID - Drain Current - A
ID - Drain Current - A
RDS (on) - Drain to Source On-state Resistance - m
100
RDS (on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON STATE RESISTANCE vs. CHANNEL TEMPERATURE ID = -2.5 A
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE
100
VGS = -2.5 V -2.7 V -4.0 V
ID = -2.5 A
80
80
60
60
-4.5 V
40
40
20
20 -50
50 100 Tch - Channel Temperature -C
0
150
0 0
-2
-4
-6
-8
-10
-12
VGS - Gate to Source Voltage - V
4
Data Sheet G14761EJ1V0DS00
PA1915
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000
SWITCHING CHARACTERISTICS 1000
td(on), tr, td(off), tf - Switchig Time - ns
Ciss, Coss, Crss - Capacitance - pF
f = 1 MHz VGS = 0V
1000
100 tf
Ciss
td(off)
Coss 100 Crss
td(on) 10 tr VDD = -10 V VGS(on) = -4.0 V RG = 10 -1.0 ID - Drain Current - A -10
10 -0.1
-1
-10
-100
1 -0.1
VDS - Drain to Source Voltage - V
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
DYNAMIC INPUT CHARACTERISTICS -5
IF - Source to Drain Current - A
VGS - Gate to Source Voltage - V
100
VGS = 0V
ID = -4.5 A
-4 -3 -2 -1
10
VDD = -16 V -10 V
1
0.1
0.01 0.4
0.6
0.8
1.0
1.2
0
0
1
2
3
4
5
6
7
VF(S-D) - Diode Forward Voltage - V
QG - Gate Charge - nC
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(ch-A) - Transient Thermal Resistance - C/W
Without Board
100
Mounted on 250 mm2 x 35 m Copper Pad Connected to Drain Electrode in 50 mm x 50 mm x 1.6 mm FR-4 Board Single Pulse
10
1
0.1 0.001
0.01
0.1
1 PW - Pulse Width - s
10
100
1000
Data Sheet G14761EJ1V0DS00
5
PA1915
[MEMO]
6
Data Sheet G14761EJ1V0DS00
PA1915
[MEMO]
Data Sheet G14761EJ1V0DS00
7
PA1915
* The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

▲Up To Search▲

Price & Availability of UPA1915

	To Download UPA1915 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .